In 2016 16 th Non-Volatile Memory Technology Symposium (NVMTS) 7781517 (IEEE, 2016).Ĭhung, W., Si, M. High endurance strategies for hafnium oxide based ferroelectric field effect transistor. Charge-trapping phenomena in HfO 2-based FeFET-type nonvolatile memories. In IEEE International Reliability Physics Symposium 2E.5.1–2E.5.5 (IEEE, 2014). Origin of the endurance degradation in the novel HfO 2-based 1T ferroelectric non-volatile memories. Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2. FeFET and ferroelectric random access memories. Current status and prospects of FET-type ferroelectric memories. Physics of the ferroelectric nonvolatile memory field effect transistor. With 15-nm-thick hafnium oxide (HfO 2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 10 8, a maximum on current of 862 μA μm −1 and a low supply voltage. A passivation method based on the atomic layer deposition of aluminium oxide (Al 2O 3) was developed to protect and enhance the performance of the transistors. α-In 2Se 3 was chosen due to its appropriate bandgap, room-temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers and its potential for large-area growth. Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In 2Se 3), is used as the channel material in the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Which limits their wider application.Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. Use in non-volatile memory technology, but suffer from short retention times,

As a result, the devices are of potential to Gate insulator, the polarization state of which can be detected using theĬhannel conductance of the device.

Download a PDF of the paper titled A Ferroelectric Semiconductor Field-Effect Transistor, by Mengwei Si and 11 other authors Download PDF Abstract: Ferroelectric field-effect transistors employ a ferroelectric material as a

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